The reliability laboratory has been preliminarily established and put into operation. Based on the actual application situation, the laboratory platform has participated in the development of the group standard "Power Cycle Test Method for Silicon Carbide Metal Oxide Field Effect Transistor SiC MOSFET" formulated by the Third Generation Semiconductor Alliance. The standard was officially released in December 2025 and was specially adopted by the National Standardization Committee in January 2026, upgraded to a national standard. Currently, the national standard "Power Cycle Test Method for Silicon Carbide Metal Oxide Field Effect Transistor SiC MOSFET" is being revised.
Guoxin Microelectronics (Guangdong) Co., Ltd. has been deeply involved in the development of the standard for power cycle testing of silicon carbide MOSFETs. As a core participating unit, we have participated in the national standard solicitation and discussion, fully demonstrating our company's technological research and development strength and industry standardization contribution in the field of third-generation semiconductor SiC devices, and striving to promote the high-quality development of the domestic power semiconductor industry.
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